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scopus |
2018-01 |
IEEE Journal of the Electron Devices Society |
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Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications |
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scopus |
2018-06 |
Applied Sciences |
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Correlation between the Golden Ratio and Nanowire Transistor Performance |
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scopus |
2014-06 |
IEEE Transactions on Electron Devices |
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Comparison Between Bulk and FDSOI POM Flash Cell: A Multiscale Simulation Study |
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scopus |
2016-01 |
IEEE oint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
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Influence of quantum confinement effects and device electrostatic driven performance in ultra-scaled SixGe1−x nanowire transistors |
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2009-10 |
Anbar Journal for Engineering Sciences |
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A Proposed Improvement Model for MC-CDMA in Selective Fading Channel |
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scopus |
2017-10 |
IEEE International Conference on Simulation of Semiconductor Processes and Devices |
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Does a nanowire transistor follow the golden ratio? A 2D Poisson-Schrödinger/3D Monte Carlo simulation study |
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scopus |
2015-09 |
IEEE Nanotechnology Materials and Devices Conference |
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Performance of vertically stacked horizontal Si nanowires transistors: A 3D Monte Carlo/2D Poisson Schrodinger simulation study |
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scopus |
2015-09 |
IEEE International Workshop on Computational Electronics |
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Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors |
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scopus |
2017-07 |
International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon |
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Vertically stacked lateral Si80Ge20 nanowires transistors for 5 nm CMOS applications |
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2018-06 |
University of Glasgow UK |
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Modelling and simulation study of NMOS Si nanowire transistors |
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scopus |
2017-09 |
ECS Transactions and Proceedings of The Electrochemical Society |
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Modelling and Simulation of Advanced Semiconductor Devices |
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2017-07 |
International Workshop on Computational Nanotechnology, Windermere, UK |
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Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors |
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2017-07 |
International Workshop on Computational Nanotechnology, Windermere, UK |
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Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors |
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2017-10 |
IEEE Nanotechnology Materials and Devices Conference |
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Vertically Stacked Lateral Nanowire Transistors: Optimisation for 5nm CMOS Technology |
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2017-11 |
IEEE Nanotechnology Materials and Devices Conference |
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Vertically Stacked Lateral Nanowire Transistors: Optimisation for 5nm CMOS Technology |
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scopus |
2017-11 |
IEEE Journal of the Electron Devices Society |
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Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5 nm CMOS Applications |
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scopus |
2017-01 |
Solid-State Electronics |
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Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit |
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scopus |
2015-09 |
IEEE Nanotechnology Materials and Devices Conference |
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Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors |
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scopus |
2018-10 |
International Conference on Simulation of Semiconductor Processes and Devices |
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Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study |
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scopus |
2015-10 |
IEEE Transactions on Electron Devices |
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Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors |
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scopus |
2016-05 |
IEEE International Symposium on Quality Electronic Design |
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Nanowire transistor solutions for 5nm and beyond |
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