كلية الهندسة
قسم الهندسة الكهربائية
البريد الالكتروني [email protected]
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"Over every possessor of knowledge is one [more] knowing"
| تحميل | تاريخ رفع المحاضرة | نوع الملف | المرحلة | القسم | الكلية | اسم المحاضرة | ت |
| 2019/04/15 | 1 | رئاسة الجامعة المستنصرية | قسم شؤون الديوان | Text_All | 1 | ||
| 2019/04/15 | 1 | رئاسة الجامعة المستنصرية | قسم شؤون الديوان | Lec_B | 2 | ||
| 2019/04/15 | 1 | رئاسة الجامعة المستنصرية | قسم شؤون الديوان | Lec_A1 | 3 |
لا توجد سيرة ذاتية منشورة لهذا التدريسي حالياً.
| رابط البحث | قاعدة البيانات | تاريخ النشر | اسم المجلة | اسم الباحث | عنوان البحث | ت |
| Scopus | 2025-02-21 | Clinical and Investigative Orthodontics | م.د . طالب محمود علي | Reliability of 2D motion analysis software for evaluation of dynamic smile asymmetry using smartphone technology | 1 | |
| scopus | 2018-01 | IEEE Journal of the Electron Devices Society | م.د . طالب محمود علي | Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5-nm CMOS Applications | 2 | |
| scopus | 2018-06 | Applied Sciences | م.د . طالب محمود علي | Correlation between the Golden Ratio and Nanowire Transistor Performance | 3 | |
| scopus | 2014-06 | IEEE Transactions on Electron Devices | م.د . طالب محمود علي | Comparison Between Bulk and FDSOI POM Flash Cell: A Multiscale Simulation Study | 4 | |
| scopus | 2016-01 | IEEE oint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon | م.د . طالب محمود علي | Influence of quantum confinement effects and device electrostatic driven performance in ultra-scaled SixGe1−x nanowire transistors | 5 | |
| local | 2009-10 | Anbar Journal for Engineering Sciences | م.د . طالب محمود علي | A Proposed Improvement Model for MC-CDMA in Selective Fading Channel | 6 | |
| scopus | 2017-10 | IEEE International Conference on Simulation of Semiconductor Processes and Devices | م.د . طالب محمود علي | Does a nanowire transistor follow the golden ratio? A 2D Poisson-Schrödinger/3D Monte Carlo simulation study | 7 | |
| scopus | 2015-09 | IEEE Nanotechnology Materials and Devices Conference | م.د . طالب محمود علي | Performance of vertically stacked horizontal Si nanowires transistors: A 3D Monte Carlo/2D Poisson Schrodinger simulation study | 8 | |
| scopus | 2015-09 | IEEE International Workshop on Computational Electronics | م.د . طالب محمود علي | Influence of quantum confinement effects over device performance in circular and elliptical silicon nanowire transistors | 9 | |
| scopus | 2017-07 | International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon | م.د . طالب محمود علي | Vertically stacked lateral Si80Ge20 nanowires transistors for 5 nm CMOS applications | 10 | |
| other_w | 2018-06 | University of Glasgow UK | م.د . طالب محمود علي | Modelling and simulation study of NMOS Si nanowire transistors | 11 | |
| scopus | 2017-09 | ECS Transactions and Proceedings of The Electrochemical Society | م.د . طالب محمود علي | Modelling and Simulation of Advanced Semiconductor Devices | 12 | |
| other_w | 2017-07 | International Workshop on Computational Nanotechnology, Windermere, UK | م.د . طالب محمود علي | Position-Dependent Performance in 5 nm Vertically Stacked Lateral Si Nanowires Transistors | 13 | |
| other_w | 2017-07 | International Workshop on Computational Nanotechnology, Windermere, UK | م.د . طالب محمود علي | Variability-Aware Simulations of 5 nm Vertically Stacked Lateral Si Nanowires Transistors | 14 | |
| other_w | 2017-10 | IEEE Nanotechnology Materials and Devices Conference | م.د . طالب محمود علي | Vertically Stacked Lateral Nanowire Transistors: Optimisation for 5nm CMOS Technology | 15 | |
| — | other_w | 2017-11 | IEEE Nanotechnology Materials and Devices Conference | م.د . طالب محمود علي | Vertically Stacked Lateral Nanowire Transistors: Optimisation for 5nm CMOS Technology | 16 |
| scopus | 2017-11 | IEEE Journal of the Electron Devices Society | م.د . طالب محمود علي | Simulation Study of Vertically Stacked Lateral Si Nanowires Transistors for 5 nm CMOS Applications | 17 | |
| scopus | 2017-01 | Solid-State Electronics | م.د . طالب محمود علي | Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit | 18 | |
| scopus | 2015-09 | IEEE Nanotechnology Materials and Devices Conference | م.د . طالب محمود علي | Correlation between Gate Length, Geometry and Electrostatic Driven Performance in Ultra-Scaled Silicon Nanowire Transistors | 19 | |
| scopus | 2018-10 | International Conference on Simulation of Semiconductor Processes and Devices | م.د . طالب محمود علي | Impact of strain on the performance of Si nanowires transistors at the scaling limit: A 3D Monte Carlo/2D poisson schrodinger simulation study | 20 | |
| scopus | 2015-10 | IEEE Transactions on Electron Devices | م.د . طالب محمود علي | Simulation Study of the Impact of Quantum Confinement on the Electrostatically Driven Performance of n-type Nanowire Transistors | 21 | |
| scopus | 2016-05 | IEEE International Symposium on Quality Electronic Design | م.د . طالب محمود علي | Nanowire transistor solutions for 5nm and beyond | 22 |